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Nichia, a leader in GaN series research, does not provide reliability data for 515 nm lasers, but they also produce another 510-513 nm laser diode that can operate for 500 hours without being electrically charged; After a few hours, the laser performance will gradually decrease. Nichia's researchers define the useful life of the laser based on a 30% increase in operating current compared to the initial value. It is estimated that the laser can last up to 5,000 hours.
The Nichia team used diodes separated by a separate confinement heterostructure (SCH) to produce lasers, almost identical to the designs they published in 2001. The deposition of AlInGaN thin films on a free-standing c-plane GaN substrate by an optimized MOCVD process is the key to producing green light in high indium content materials.
The Nichia team said that they improved the epitaxial layer, especially the multiple quantum well layer (MQW) growth conditions, while also improving the crystal quality of the high indium-rich InGaN active layer, but did not further publish details about the optimization conditions. Nichia has previously published an InGaN laser diode with a wavelength of 488 nm, but the non-radiative region is generated due to poor crystal quality, and a dark region is exhibited under photoluminescence (PL) analysis. Nichia's Takashi Mukai et al. pointed out that these areas have been eliminated in the design of new devices.
The current and current density thresholds of the 515 nm laser diode at room temperature are 53 mA and 4.4 kA/cm2, respectively. The output power is 5 mW at an operating current of 88 mA and a voltage of 5.5 V. The laser diode operating at 510-513 nm has a maximum wavelength shift of 0.022 nm/K due to temperature changes at room temperature, which is much smaller than the green laser diode recently introduced by Osram and Rohm. 
Attacking Green Zone, Nichia successfully developed 515 nm laser diode
Nichia, a Japanese LED manufacturer, uses a GaN substrate fabricated with a blue laser to improve the process and structure to produce a continuous-wave green laser diode with a wavelength of 515 nm, breaking the previous electrically excited InGaN laser. Maintaining the longest wavelength record of 500nm, and is moving toward the goal of a life cycle of hundreds of hours.