Fairchild Announces SuperFET III MOSFET Family with First-Class Efficiency and Reliability

Photocoupler

Fairchild , now part of ON Semiconductor, today introduced its SuperFETTM III family for 650V N-Channel MOSFETs , the company's next-generation MOSFETs for the latest communications, server and electric vehicle (EV) charging Higher power density, system efficiency and superior reliability requirements for solar and solar products.

The SuperFET III MOSFET family combines best-in-class reliability, low EMI, excellent efficiency and excellent thermal performance, making it ideal for high performance applications. In addition to top-notch performance, the series offers a wide range of package options, giving product designers greater flexibility, especially for size-constrained designs.

Zhao Jin, vice president and general manager of Fairchild's high-power industrial division, said: "No matter what industry our customers are in, they are always pursuing a significant increase in the efficiency, performance and reliability of each new generation of products, while striving to accelerate new products. The pace of the market. While designing new SuperFET III MOSFETs to help customers achieve their key product goals, we also ensure that these devices reduce BOM cost, reduce board space and simplify product design."

SuperFET III technology has the lowest Rdson of all convenient-drive super-junction MOSFETs, resulting in best-in-class efficiency. Thanks to advanced charge balancing technology, this technology reduces Rdson by 44% in the same package size compared to its predecessor SuperFET II.

The key to achieving superior ruggedness and reliability in the SuperFET III family is its state-of-the-art body diode and single-pulse avalanche energy (EAS) performance that is twice as high as the nearest competitor.

The peak drain-to-source voltage of the 650V SuperFET III family is lower during shutdown, improving the reliability of the system under low temperature conditions, as the breakdown voltage is naturally reduced by -25°C junction temperature compared to room temperature. %, and the peak drain-source voltage at low temperatures becomes higher.

These reliability advantages are especially important for a variety of industrial applications, such as photovoltaic inverters, uninterruptible power supplies (UPS) and EV chargers, as they must be able to withstand higher or lower ambient temperatures. The SuperFET III MOSFET family is available today with a variety of package and parameter options:

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